physics based 2-D analytical model of triple material double gate tunnel field effect transistor (Record no. 39716)

000 -LEADER
fixed length control field 00524nam a2200157 4500
003 - CONTROL NUMBER IDENTIFIER
control field BD-DhUET
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 170107b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Transcribing agency 0
Modifying agency BD-DhUET
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Samia Safa
245 ## - TITLE STATEMENT
Title physics based 2-D analytical model of triple material double gate tunnel field effect transistor
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. Dhaka
Name of publisher, distributor, etc. Department of Electrical and Electronic Engineering, BUET
Date of publication, distribution, etc. 2016
300 ## - PHYSICAL DESCRIPTION
Extent xiv, 95p.
501 ## - WITH NOTE
With note one CD-ROM
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographies
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Thesis

No items available.