Operation and modeling of the MOS transistor
by Tsividis, Yannis.
Series: McGraw-Hill series in electrical engineering.Publisher: New York Oxford University Press 1999Edition: 2nd ed.Description: xx, 620 p. ill. 25 cm.ISBN: 0195170148 .Subject(s): Metal oxide semiconductorsOnline resources: Click here to access online | Click here to access onlineItem type | Current location | Call number | Copy number | Status | Date due | Barcode |
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General Book | Central Library, BUET | 623.815284 TSI/1999 (Browse shelf) | Available | |||
General Book | Central Library, BUET Reading section | 623.815284/TSI/1999 (Browse shelf) | 1 | Available | 101675 | |
Reading Item | Central Library, BUET Reading section | 623.815284/TSI/1999 (Browse shelf) | 2 | Available | 93006 |
Browsing Central Library, BUET Shelves , Shelving location: Reading section Close shelf browser
623.815284/FOT/1997 MOSFET modeling with SPICE | 623.815284/FOT/1997 MOSFET modeling with SPICE | 623.815284/PIE/1990 Field effect devices | 623.815284/TSI/1999 Operation and modeling of the MOS transistor | 623.815284/TSI/1999 Operation and modeling of the MOS transistor | 623.815284/TSI/1999 Operation and modeling of the MOS transistor | 623.815284/WAR/1999 MOSFET theory and design |
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