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Analytical modeling of channel potential and threshold voltage of triple material gate AlgaN/Gan hemt and study of its self-heating effect

by Tashfiq Bin Kashem, Md.

Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2016Description: xvii, 64 p.Subject(s): Semiconductors | Semiconductor-MaterialsOnline resources: Click here to access online

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Item type	Current location	Call number	Copy number	Status	Date due	Barcode
Thesis	Central Library, BUET Reference section	628.815/TAS/2016 (Browse shelf)	1	Available		114987

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Previous	628.72095492/FAR/2019 Protecting the Meghna river	628.720954922/ZAR/2021 Assessment of surfactant concentration in selected water bodies in Dhaka city and its removal by alum coagulation	628.8/AME/1988 Evaluation procedures for hydrologic safety of dams	628.815/TAS/2016 Analytical modeling of channel potential and threshold voltage of triple material gate AlgaN/Gan hemt and study of its self-heating effect	628.81502/RIC/1956 Handbook of semiconductor electronics	628.81502/RIC/1956 Handbook of semiconductor electronics	628.87 / NAA The Naval Architect	Next

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