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Development of a simulator for transition metal dichalcogenide channel field effect transistors incorporating quantum mechanical effects

by Shafiqul Islam, Md.
Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2018Description: xi, 44 p.Subject(s): Transistors | Transition-Metal dichalcogenideOnline resources: Click here to access online
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Item type Current location Call number Copy number Status Date due Barcode
Thesis Central Library, BUET
Reference section 		623.84131/SHA/2018 (Browse shelf) 1 Available 116180

One CD-ROM

Includes bibliographies

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