Cover image

Normal view MARC view ISBD view

Quantum mechanical analysis of transport phenomena through 2d transition metal dichalcogenide material based tunnel field effect transistor

by Paul , Tanmoy Kumar.

Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2018Description: xi, 77 p.Subject(s): NanotechnologyOnline resources: Click here to access online

Tags from this library: No tags from this library for this title. Add tag(s)

Log in to add tags.

average rating: 0.0 (0 votes)

Holdings ( 1 )
Title notes
Comments ( 0 )

Item type	Current location	Call number	Copy number	Status	Date due	Barcode
Thesis	Central Library, BUET Reference section	623.815/PAU/2018 (Browse shelf)	1	Available		116793

Browsing Central Library, BUET Shelves , Shelving location: Reference section Close shelf browser

Previous		No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available		Next
Previous	623.815/MOS/1981 Handbook on semiconductors	623.815/MUK/2018 Design of plasmonic nanostructures for single molecule detection based on fluorescence dependent surface Plasmon coupled emission	623.815/OIN/2019 Synthesis and characterization of novel antimicrobial agent with inorganic nanoparticles and composites	623.815/PAU/2018 Quantum mechanical analysis of transport phenomena through 2d transition metal dichalcogenide material based tunnel field effect transistor	623.815/PRO/2007 Advanced workshop on recent developments in nanomaterials	623.815/PRO/2008 Semiconductor electronics	623.815/PRO/2009 Nanoscience and nanotechnology for chemical and biological defense	Next

One CD-ROM

Includes bibliographies

There are no comments for this item.

Log in to your account to post a comment.

Share