Normal view MARC view ISBD view

Modeling of drain current for graphene channel G4FET and gate-all-around MOSFET

by Rakibul Alam,Md.
Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2018Description: ix, 25 p.Subject(s): MOSFETOnline resources: Click here to access online
Tags from this library: No tags from this library for this title. Add tag(s)
Log in to add tags.
    average rating: 0.0 (0 votes)