Cover image

Normal view MARC view ISBD view

Modeling of drain current for graphene channel G4FET and gate-all-around MOSFET

by Rakibul Alam,Md.

Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2018Description: ix, 25 p.Subject(s): MOSFETOnline resources: Click here to access online

Tags from this library: No tags from this library for this title. Add tag(s)

Log in to add tags.

average rating: 0.0 (0 votes)

Holdings ( 1 )
Title notes
Comments ( 0 )

Item type	Current location	Call number	Copy number	Status	Date due	Barcode
Thesis	Central Library, BUET Reference section	623.9732/RAK/2018 (Browse shelf)	1	Available		117245

Browsing Central Library, BUET Shelves , Shelving location: Reference section Close shelf browser

Previous	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	Next
Previous	623.9732 /NAE/2012 Surface potential and threshold voltage modeling of pocket implanted asymmetric n-channel MOSFETs	623.9732 /NAS/2011 Drain current modeling of double gate uniaxially strained silicon MOSFET	623.9732 /RAI/2011 Effect of strain on electrostatic and ballistic transport performance limit for high mobility substrate MOSFETS and MOS HEMTS	623.9732/RAK/2018 Modeling of drain current for graphene channel G4FET and gate-all-around MOSFET	623.9732/REA/2021 Analytical modeling of electrostatic and transport phenomena in inversion-type inGaAs nanowire MOSFET	623.9732/SAE/2013 Quantum mechanical modeling and simulation of monolayer WSe2 channel field effect transistor	623.9732/SHU/2014 Accurate drain current modeling of long channel junctionless double-gate field effect transistor	Next

One CD-ROM

Includes bibliographies

There are no comments for this item.

Log in to your account to post a comment.

Share