Analytical modeling of electrostatic and transport phenomena in inversion-type inGaAs nanowire MOSFET
by Reaz Rahman, I.K.M.
Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2021Description: xvi, 109 p.Subject(s): MOSFETOnline resources: Click here to access onlineItem type | Current location | Call number | Copy number | Status | Date due | Barcode |
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Thesis | Central Library, BUET Reference section | 623.9732/REA/2021 (Browse shelf) | 1 | Available | 117764 |
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Includes bibliographies
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