Normal view MARC view ISBD view

Effects of bulk vacancy and short channel in molybdenum disulfide nanoribbon topological FET

by Adib Md. Ridwan.
Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2026Description: x,71p.
Tags from this library: No tags from this library for this title. Add tag(s)
Log in to add tags.
    average rating: 0.0 (0 votes)