Enhancement of hole mobility in InGaN by strain engineering
by Saimur Rahman Arnab.
Publisher: Dhaka Department of Electrical and Electronic Engineering (EEE), BUET 2025Description: xii, 43 p.| Item type | Current location | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
| Thesis | Central Library, BUET Acquisition section | Available | 120934 |
One CD-ROM
Includes bibliographies
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