| 000 | 00530nam a22001931 4500 | ||
|---|---|---|---|
| 001 | 23589 | ||
| 003 | BD-DhUET | ||
| 008 | 740605s1967 nyua b 000 0 eng | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 |
_a623.8151 _bRIC/1967 |
||
| 100 | _aRichman, Paul | ||
| 245 | 1 | 0 | _aCharacteristics and operation of MOS field-effect devices |
| 250 | _a1st ed. | ||
| 260 |
_aNew York _bMcGraw-Hill _c1967 |
||
| 300 |
_ax, 150 p. _billus _c23 cm. |
||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aField effect transistors | |
| 942 | _cGB | ||
| 999 |
_c23589 _d23589 |
||