| 000 | 00638nam a2200217 a 4500 | ||
|---|---|---|---|
| 001 | 23608 | ||
| 003 | BD-DhUET | ||
| 008 | 850131s1985 nyua b 001 0 eng | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 |
_a623.815 _bNUS/1962 |
||
| 100 | _aNussbaum, Allen | ||
| 245 | 1 | 0 | _aSemiconductor devices physics |
| 250 | _a1st ed. | ||
| 260 |
_aNew Jersey _b Prentice-Hall _c1962 |
||
| 300 |
_axi, 340p. _bill. _c25 cm. |
||
| 490 | _aInternational series in electrical engineering | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aTransistors | |
| 856 | 4 | 2 | _uhttp://www.loc.gov/catdir/enhancements/fy0607/85003217-d.html |
| 942 | _cGB | ||
| 999 |
_c23608 _d23608 |
||