| 000 | 00587nam a2200205 a 4500 | ||
|---|---|---|---|
| 001 | 2827 | ||
| 003 | BD-DhUET | ||
| 008 | 890331s1990 nyua b 001 0 eng | ||
| 020 | _a0070541205 | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 | 0 | 0 |
_a623.81522 _bROU/1990 |
| 100 | 1 | _aRoulston, David J. | |
| 245 | 1 | 0 |
_aBipolar semiconductor devices _cby David J. Roulston. |
| 250 | _a1st ed. | ||
| 260 |
_aNew York : _bMcGraw-Hill, _c1990. |
||
| 300 |
_axxi, 422p. : _bill. ; _c25 cm. |
||
| 504 | _aIncludes bibliographies. | ||
| 650 | 0 | _aDiodes, Semiconductor-Design and construction | |
| 942 | _cGB | ||
| 999 |
_c2827 _d2827 |
||