000 | 00587nam a2200205 a 4500 | ||
---|---|---|---|
001 | 2827 | ||
003 | BD-DhUET | ||
008 | 890331s1990 nyua b 001 0 eng | ||
020 | _a0070541205 | ||
040 |
_aDLC _cDLC _dBD-DhUET |
||
082 | 0 | 0 |
_a623.81522 _bROU/1990 |
100 | 1 | _aRoulston, David J. | |
245 | 1 | 0 |
_aBipolar semiconductor devices _cby David J. Roulston. |
250 | _a1st ed. | ||
260 |
_aNew York : _bMcGraw-Hill, _c1990. |
||
300 |
_axxi, 422p. : _bill. ; _c25 cm. |
||
504 | _aIncludes bibliographies. | ||
650 | 0 | _aDiodes, Semiconductor-Design and construction | |
942 | _cGB | ||
999 |
_c2827 _d2827 |