| 000 | 00590nam a2200193 4500 | ||
|---|---|---|---|
| 001 | 30432 | ||
| 003 | BD-DhUET | ||
| 008 | 150624b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.9732 _bARA/2014 |
||
| 100 | _a Arafat Mahmud, Md. | ||
| 245 | _aAnalytical modeling of threshold voltage and drain current of gate and channel engineered double gate MOSFET | ||
| 260 |
_aDhaka _bElectrical and Electronic Engineering, BUET _c2014 |
||
| 300 | _axviii,61p. | ||
| 500 | _aWith one CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aMOSFET | |
| 942 | _cTH | ||
| 999 |
_c30432 _d30432 |
||