| 000 | 00789nam a2200241 a 4500 | ||
|---|---|---|---|
| 001 | 30472 | ||
| 003 | BD-DhUET | ||
| 008 | 031117s1999 nyua b 001 0 eng | ||
| 020 | _a0195170148 | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 | 0 | 0 |
_a623.815284 _bTSI/1999 |
| 100 | _aTsividis, Yannis | ||
| 245 | 1 | 0 | _aOperation and modeling of the MOS transistor |
| 250 | _a2nd ed. | ||
| 260 |
_aNew York _bOxford University Press _c1999 |
||
| 300 |
_axx, 620 p. _bill. _c25 cm. |
||
| 490 | _aMcGraw-Hill series in electrical engineering | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aMetal oxide semiconductors | |
| 856 | 4 | 2 | _uhttp://www.loc.gov/catdir/enhancements/fy0615/2003283093-d.html |
| 856 | 4 | 1 | _uhttp://www.loc.gov/catdir/enhancements/fy0615/2003283093-t.html |
| 942 | _cGB | ||
| 999 |
_c30472 _d30472 |
||