| 000 | 00536nam a2200193 a 4500 | ||
|---|---|---|---|
| 001 | 30824 | ||
| 003 | BD-DhUET | ||
| 008 | 931007s1994 nyua b 001 0 eng | ||
| 020 | _a0471580058 | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 | 0 | 0 |
_a623.815 _bGHA/1994 |
| 100 | _aGhandhi, Sorab K. | ||
| 245 | 1 | 0 |
_aVLSI fabrication principles _bsilicon and gallium arsenide _cSorab K. Ghandhi. |
| 250 | _a2nd ed. | ||
| 260 |
_aNew York _bWiley _c1994 |
||
| 300 |
_axxiv, 834 p. _bill. _c25 cm. |
||
| 650 | 0 | _aIntegrated circuits | |
| 942 | _cGB | ||
| 999 |
_c30824 _d30824 |
||