000 00583nam a22001937a 4500
001 37022
003 BD-DhUET
008 160119b xxu||||| |||| 00| 0 eng d
040 _c0
_dBD-DhUET
082 _a623.81528
_bURM/2014
100 _aUrmita Sikder
245 _aModeling of subthreshold characteristics of non-planar multi-gate inGaAs quantum well field effect transistor
260 _aDhaka
_b Electrical and Electronic Engineering
_c2014
300 _a xii,72p.
501 _aWith one CD-ROM
504 _aIncludes bibliographies
650 0 _aTransistors
942 _cTH
999 _c37022
_d37022