000 00583nam a22001937a 4500
001 37125
003 BD-DhUET
008 160120b xxu||||| |||| 00| 0 eng d
040 _c0
_dBD-DhUET
082 _a623.84131
_bHAS/2014
100 _aHasibul Alam, Md.
245 _aEffect of biaxial strain on the performance of graphene/BN hetero bilayer based field effect transistor
260 _aDhaka
_bElectrical and Electronic Engineering, BUET
_c2014
300 _axii,71p.
501 _aWith one CD-ROM
504 _aIncludes bibliographies
650 0 _aTransistors
942 _cTH
999 _c37125
_d37125