| 000 | 00524nam a2200157 4500 | ||
|---|---|---|---|
| 003 | BD-DhUET | ||
| 008 | 170107b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 100 | _aSamia Safa | ||
| 245 | _aphysics based 2-D analytical model of triple material double gate tunnel field effect transistor | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2016 |
||
| 300 | _axiv, 95p. | ||
| 501 | _aone CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 942 | _cTH | ||
| 999 |
_c39716 _d39716 |
||