| 000 | 00800nam a2200229 4500 | ||
|---|---|---|---|
| 001 | 39717 | ||
| 003 | BD-DhUET | ||
| 008 | 170107b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
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| 082 |
_a623.84131 _bSAM/2016 |
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| 100 | _aSamia Safa | ||
| 245 | _aPhysics based 2-D analytical model of triple material double gate tunnel field effect transistor | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2016 |
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| 300 | _axiv, 9 p. | ||
| 501 | _aOne CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aTransistors | |
| 650 | 0 | _aMOSFET | |
| 720 |
_aDr. Md. Ziaur Rahman Khan _eM.Sc. Thesis – Electrical and Electronic Engineering |
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| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/4468 | ||
| 942 | _cTH | ||
| 999 |
_c39717 _d39717 |
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