| 000 | 00767nam a22002177a 4500 | ||
|---|---|---|---|
| 001 | 39965 | ||
| 003 | BD-DhUET | ||
| 008 | 170423b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.9732 _bFAR/2016 |
||
| 100 | _aFarhana Parveen | ||
| 245 | _aHigh performance non-volatile ternary content addressable memory design using memristor-MOSFET hybrid architecture | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2016 |
||
| 300 | _aix, 314p. | ||
| 501 | _aOne CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aMOSFET | |
| 720 |
_aDr. A.B.M. Harun-ur Rashid _eM.Sc. Thesis – Electrical and Electronic Engineering |
||
| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/4568 | ||
| 942 | _cTH | ||
| 999 |
_c39965 _d39965 |
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