| 000 | 00695nam a22001817a 4500 | ||
|---|---|---|---|
| 001 | 40494 | ||
| 003 | BD-DhUET | ||
| 008 | 170926b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.9732 _b/RAI/2011 |
||
| 100 | _aRaisul Islam | ||
| 245 | _aEffect of strain on electrostatic and ballistic transport performance limit for high mobility substrate MOSFETS and MOS HEMTS | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET |
||
| 650 | 0 | _aMOSFET-Numerical results | |
| 720 |
_aDr. Quazi Deen Mohd. Khosru _eM.Sc. Thesis – Electrical and Electronic Engineering |
||
| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3629 | ||
| 942 | _cTH | ||
| 999 |
_c40494 _d40494 |
||