| 000 | 00636nam a22001817a 4500 | ||
|---|---|---|---|
| 001 | 40588 | ||
| 003 | BD-DhUET | ||
| 008 | 171008b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.9732 _b/NAS/2011 |
||
| 100 | _aNasir Uddin Bhuyian, Md. | ||
| 245 | _aDrain current modeling of double gate uniaxially strained silicon MOSFET | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET |
||
| 650 | 0 | _aMOSFET | |
| 720 |
_aDr. Quazi Deen Mohd. Khosru _eM.Sc. Thesis – Electrical and Electronic Engineering |
||
| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3620 | ||
| 942 | _cTH | ||
| 999 |
_c40588 _d40588 |
||