000 00679nam a22001817a 4500
001 40840
003 BD-DhUET
008 171029b xxu||||| |||| 00| 0 eng d
040 _c0
_dBD-DhUET
082 _a623.815282
_b/FAZ/2012
100 _aFazle Rabbi
245 _aAnalytical modeling of early voltage and common emitter current gain for Si1-yGey heterojunction bipolar transistor
260 _aDhaka
_bDepartment of Electrical and Electronic Engineering, BUET
650 0 _aBipolar transistors
720 _aDr. Md. Ziaur Rahman Khan
_eM.Sc. Thesis – Electrical and Electronic Engineering
856 _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3598
942 _cTH
999 _c40840
_d40840