000 00822nam a22002297a 4500
001 41238
003 BD-DhUET
008 180519b xxu||||| |||| 00| 0 eng d
040 _c0
_dBD-DhUET
082 _a623.84131
_bSHA/2018
100 _aShafiqul Islam, Md.
245 _aDevelopment of a simulator for transition metal dichalcogenide channel field effect transistors incorporating quantum mechanical effects
260 _aDhaka
_bDepartment of Electrical and Electronic Engineering, BUET
_c2018
300 _axi, 44 p.
501 _aOne CD-ROM
504 _aIncludes bibliographies
650 0 _aTransistors
650 0 _aTransition-Metal dichalcogenide
720 _aDr. Quazi Deen Mohd Khosru
_eM. Sc. Thesis
856 _uURI: http://lib.buet.ac.bd:8080/xmlui/handle/123456789/5006
942 _cTH
999 _c41238
_d41238