000 | 00705nam a22002177a 4500 | ||
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001 | 41643 | ||
003 | BD-DhUET | ||
008 | 181023b xxu||||| |||| 00| 0 eng d | ||
040 |
_c0 _dBD-DhUET |
||
082 |
_a623.815 _bBIS/2018 |
||
100 | _aBiswas, Baishakhi Rani | ||
245 | _aDesign of non-volatile quaternary memory cell using memristor-mos hybrid structure | ||
260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2018 |
||
300 | _ax, 45p. | ||
501 | _aOne CD-ROM | ||
504 | _aIncludes bibliographies | ||
650 | 0 | _aMemristors | |
720 |
_aDr. A.B.M Harun-ur-Rashid _eM. Sc. Thesis |
||
856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/5050 | ||
942 | _cTH | ||
999 |
_c41643 _d41643 |