| 000 | 00732nam a22002177a 4500 | ||
|---|---|---|---|
| 001 | 42577 | ||
| 003 | BD-DhUET | ||
| 008 | 210320b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.9732 _bREA/2021 |
||
| 100 | _aReaz Rahman, I.K.M. | ||
| 245 | _aAnalytical modeling of electrostatic and transport phenomena in inversion-type inGaAs nanowire MOSFET | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2021 |
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| 300 | _axvi, 109 p. | ||
| 501 | _aOne CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aMOSFET | |
| 720 |
_aDr. Quazi Deen Mohd Khosru _eM. Sc. Thesis |
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| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/5841 | ||
| 942 | _cTH | ||
| 999 |
_c42577 _d42577 |
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