| 000 | 00994nam a2200265 a 4500 | ||
|---|---|---|---|
| 001 | 4376 | ||
| 003 | BD-DhUET | ||
| 008 | 900315s1990 nyua b 001 0 eng | ||
| 020 | _a0471623075 | ||
| 040 |
_aDLC _cDLC _dBD-DhUET |
||
| 082 | 0 | 0 |
_a623.815 _220 _bSZE/1990 |
| 245 | 0 | 0 |
_aHigh-speed semiconductor devices _cedited by S.M. Sze. |
| 250 | _a1st ed. | ||
| 260 |
_aNew York _bJohn Wiley _c1990. |
||
| 300 |
_axii, 643 p. _bill. _c24 cm. |
||
| 500 | _a"A Wiley-Interscience publication." Based on notes for lectures and talks given at the 1988 International Electron Devices and Materials Symposium, held at the National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C. | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aSemiconductors. | |
| 650 | 0 | _aDiodes, Semiconductor. | |
| 650 | 0 | _aTransistors. | |
| 700 | 1 | _aSze, S. M., | |
| 856 | 4 | 2 | _uhttp://www.loc.gov/catdir/description/wiley032/90034858.html |
| 856 | 4 | _uhttp://www.loc.gov/catdir/toc/onix02/90034858.html | |
| 942 | _cEB | ||
| 999 |
_c4376 _d4376 |
||