| 000 | 00745nam a22002177a 4500 | ||
|---|---|---|---|
| 001 | 44301 | ||
| 003 | BD-DhUET | ||
| 008 | 231108b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 082 |
_a623.815 _bMAS/2023 |
||
| 100 | _a Masoodur Rahman Khan, Md. | ||
| 245 | _aDesign of cmos-memristor hybrid ternary content addressable memory using memristor as ternary level memory cell | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering, BUET _c2023 |
||
| 300 | _axvii, 115 p. | ||
| 501 | _aOne CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 650 | 0 | _aMemristors | |
| 720 |
_aDr. A. B. M. Harun-ur Rashid _eM.Sc |
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| 856 | _uhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/6763 | ||
| 942 | _cTH | ||
| 999 |
_c44301 _d44301 |
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