| 000 | 00494nam a22001697a 4500 | ||
|---|---|---|---|
| 001 | 45573 | ||
| 003 | BD-DhUET | ||
| 008 | 250802b xxu||||| |||| 00| 0 eng d | ||
| 040 |
_c0 _dBD-DhUET |
||
| 100 | _aSaimur Rahman Arnab | ||
| 245 | _aEnhancement of hole mobility in InGaN by strain engineering | ||
| 260 |
_aDhaka _bDepartment of Electrical and Electronic Engineering (EEE), BUET _c2025 |
||
| 300 | _axii, 43 p. | ||
| 501 | _aOne CD-ROM | ||
| 504 | _aIncludes bibliographies | ||
| 942 | _cTH | ||
| 999 |
_c45573 _d45573 |
||