000 00553nam a22001697a 4500
001 45584
003 BD-DhUET
008 250802b xxu||||| |||| 00| 0 eng d
040 _c0
_dBD-DhUET
100 _aNiloy Khan, Md
245 _aPerformance analysis of field effect transistor based on room-temperature topological insulator 2D Bismuth Monobromide nanoribbon
260 _aDhaka
_bDepartment of Electrical and Electronic Engineering, BUET
_c2025
300 _axxi, 101 p.
501 _aOne CD-ROM
504 _aIncludes bibliographies
942 _cTH
999 _c45584
_d45584