Rakibul Alam, Md.
(Department of Electrical and Electronic Engineering (EEE), BUET, 2018-12-01)
The structure of Graphene channel Four Gate Field Effect Transistor (G4-FET) and Gate-All-Around (GAA) MOSFET have been developed in 3D ATLAS simulator of SILVACO in this thesis. Drain current of Graphene channel G4-FET ...