Browsing by Subject "Transistors"

Now showing items 1-11 of 11

Analytical model and performance analysis of graded channel dual material double gate junctionless field effect transistor with high-k spacer

Raisa Fabiha (Department of Electrical and Electronic Engineering (EEE), BUET, 2019-07-20)

The continuous downscaling of chip size and dimension have led to the innovation of newer, cheaper and more efficient transistors since its first invention in 1947. As predicted by More Moore scaling, the transistor’s gate ...
Base transit time of a Si/SiGe HBT considering gaussian doped base

Moududul Islam, S. M. (Department of Electrical and Electronic Engineering (EEE), 2010-08)

Base transit time of an HBT is more than 70% of its total transit time. Therefore it plays a very crucial role in determining the transistor’s high frequency performance. In the present work, base transit time of a Gaussian ...
Compact analytical model for monolayer transition metal dichalcogenide channel field effect transistors

Ayaz Masud, Md. (Department of Electrical and Electronic Engineering (EEE), BUET, 2018-04-07)

In recent years, researchers have been very excited about the prospects of 2-D transition metal dichalcogenides (TMD) as a suitable semiconducting material for the channel in transistor devices. In order to evaluate their ...
Development of an efficient universal simulator for junctionless nanowire field effect transistors incorporating quantum mechanical effects

Jewel Mohajan (Department of Electrical and Electronic Engineering (EEE), BUET, 2019-04-27)

In this thesis, electrostatic and transport characteristics of n-channel Gate-all-around Junctionless Nanowire Transistor (GAA-JNT) and their interrelations have been studied. GAA-JNT is a novel electronic device, which ...
Effect of biaxial strain on the performance of graphene/BN hetero bilayer based field effect transistor

Hasibul Alam, Md. (Department of Electrical and Electronic Engineering (EEE), 2014-09)

Recent simulation study shows that a considerable and stable band gap can be opened in 2D materials by applying biaxial strain. But a systematic study on the effect of biaxial strain on band gap and other important ...
Effects of source drain underlap on the performance of silicon nanowire on insulator transistors

Bhowmick, Sishir (Department of Electrical and Electronic Engineering, BUET, 2008-12-28)

For abstracts please see full text
Electronic properties and transistor applications of MoS2/MX2/Mos2 trilayer heterostructures

Datta, Kanak (Department of Electrical and Electronic Engineering (EEE), 2016-08)

In recent years, a lot of scienti c research e ort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical ...
Modeling of subthreshold characteristics of non-planar multi-gate inGaAs quantum well field effect transistor

Urmita Sikder (Department of Electrical and Electronic Engineering (EEE), 2014-06)

In this work, a physically based analytical model for the threshold voltage and subthreshold swing of non-planar trigate InGaAs quantum well field effect transistor (QWFET) has been developed. The model is derived from ...
Phonon scattered electron transport calculation of junctionless nanowire transistor by a computationally efficient atomistic approach

Samzid Bin Hafiz, Md. (Department of Electrical and Electronic Engineering (EEE), BUET, 2019-08-31)

In this thesis, electronic transport characteristics of Junctionless Nanowire Transistor (JNT) in presence of phonon scattering has been studied. JNT is a novel electronic device, which has no distinct p-n junction and no ...
Physics based 2-D analytical model of triple material double gate tunnel field effect transistor

Samia Safa (Department of Electrical and Electronic Engineering (EEE), 2016-04)

Tunnel FETs are attractive new devices for low-power applications due to their low off-current and their potential for a small subthreshold swing. In this work, analytical models of potential, electric field, drain current ...
Quantum mechanical modeling and implementation of single electron transistor circuit

Riazur Rahman Mazumder, Mohammad (Department of Electrical and Electronic Engineering (EEE), 2011-08)

Different models of nano-electronic quantum device Single Electron Transistor (SET) are studied in this work, a modified macro model is proposed and at the end its application in a communication circuit is presented. In ...

Now showing items 1-11 of 11

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