Abstract:
Critical transistor dimensions scale below the 100 nm regime. where quantum mechanical
analysis is more appropriate than the semi-classical approach to model the device
parameters. Simulation tools. which can be applied to design nanoscale transistors in the
future. require new theory and modeling techniques that capture the physics of carrier
transport accurately and efficiently. Quantum analysis needs rigorous calculation and it is
time consuming. This thesis outlines an easy approach to model carrier transport in
nanoscale transistors which is in between semi-classical and quantum mechanical
analysis. The semi-classical expressions are modified so that the evaluated results are
consistent with that derived quantum mechanically. In this work •.carrier scattering in the
inversion channel has been described in terms of mobility. A simple model of the
effective mobility of MOSFET is proposed taking into account the carrier scattering
mechanisms. Current-voltage characteristics are obtained using the effective mobility.
The model shows good agreement with the simulation and experimental results for
nanoscale MOSFETs.
