Abstract:
Potential channel structures having single and double discontinuities in lateral
dimensions are studied in detail. A matrix formulation has been developed
using the continuity conditions for the electron wave function and its
derivative. It has been shown that the flow of current is very sensitive to the
length and lateral dimensions of the channel segments. Significant variation of
the channel width can be achieved b,' applying external voltage in the
transverse direction which paves the way for the device to be used as an
amplifier. Time response' of the device is computed and is found to be very
fast. Dependence of the current on the gate' voltage is studied and the
calculated results are presented, Values of the transconductance for the
proposed amplifier are calculated and a relatively high value of
transconductance comparable to that of the existing FETs are obtained.
