Abstract:
Continuous improvement in .the field of technology and transistor
physics have progressively opened up, to bipolar devices, the
area of power applications upto 50 or 100 KVA. In particular the
control of deep diffusion and thick epitaxies with low impurity
concentrations had led to use n+pn-n+ bipolar transistor as
power switches. In this thesis an analytic design model is
developed for epitaxial bipolar transistor swi tches where
optimal calculations have been carried out for structural
parameters which make it possible to comply in the best possible
way with given specifications. All the numerical models follow a
lengthy procedure and involves a large amount of computations. On
the other hand this model is simple and straight forward and
needs less computations. Results obtained by using this analytic
model are compared with those evaluated numerically and are
found in good agreement.
