Study of the performance of crystalline si-solar cell for carrier recombination on the back surface

Abstract

The efficiency of crystalline Si-solar cell for carrier recombination in the back surface has been analyzed briefly on the basis of back surface. A chronological description of scientific achievement of crystalline Si-solar cell has been presented with special issues. The recombination processes, Shockley-Read-Han th~or)', gettering and solar cell characteristics (electrical characteristics, solar cell efficiency, shon circuit current and open clnouit voltage) have been discussed with reference to the crystalline Si-solar. TIle analysis on optimization of cell efficiency presents the factors those arc responsible for the loss of efficiency of the crystalline Si~solar cell. It is ShO"'l\ that the performance of crystalline Si-solat, cell could be improved by incorporating the reduction of carrier recombination from the back surface and optimizMion ofthc ceIl by gettcring. A co-relationship ha, ocen framed out between the parameters responsihle for the hcttcr yield of the cell perfonnanee. Numerical analysis has hcen pcrfonncd using programming language C as an aid in the numerical analysis. The results have been di~cus~ed linally with references to the practicability or the analy /.ed configuration and performance of thc crystalline Si-solar cdls. Finally, it has lJt,en ~f.Iggesled tbal lhe estimaled efficiency for thc erystaUirle Si-solar cell of this dissertation is 32.04 %.