Abstract:
For understanding the Liquid Phase Epitaxy (LPE). growth kinetics, a
kinetic model has been developed for Ill-III-V and lll-V-V compound
semiconductors during the growth with phase equilibrium condition applied
between the growing crystal and solution using numerical method of Laplacian
centered difference approximation. Then one-dimensional diffusion limited
growth models have been extended for InGaP, InGaAs and InAsP. Crystallization
path and its expression was analyzed and used to understand the growth kinetics
based on the phase diagram relationship. Computer programmes are used to solve
different equations of layer thickness, concentration profiles, dimensionless
profiles and atomic fractions. The layer thickness of the ternary compounds is
grown as a function of different growth temperatures and growth times for
• different cooling rates. Solid composition of ternary materials as a function of
temperature for different cooling rates has been calculated. The concentration
profiles have also been simulated in front of growing interface for different growth
temperatures and cooling rates. Dimensionless concentration parameter is also
calculated and is represented as a function of different cooling rates and thickness.
A comparison among the three ternaries for their respective growing thickness
with time is also done. A good agreement is found between the present findings
and the experimental values.
