Theoretical model study of liquid phase epitaxial growth knietics of some ternary III-V compound semoconductors

Abstract

For understanding the Liquid Phase Epitaxy (LPE). growth kinetics, a kinetic model has been developed for Ill-III-V and lll-V-V compound semiconductors during the growth with phase equilibrium condition applied between the growing crystal and solution using numerical method of Laplacian centered difference approximation. Then one-dimensional diffusion limited growth models have been extended for InGaP, InGaAs and InAsP. Crystallization path and its expression was analyzed and used to understand the growth kinetics based on the phase diagram relationship. Computer programmes are used to solve different equations of layer thickness, concentration profiles, dimensionless profiles and atomic fractions. The layer thickness of the ternary compounds is grown as a function of different growth temperatures and growth times for • different cooling rates. Solid composition of ternary materials as a function of temperature for different cooling rates has been calculated. The concentration profiles have also been simulated in front of growing interface for different growth temperatures and cooling rates. Dimensionless concentration parameter is also calculated and is represented as a function of different cooling rates and thickness. A comparison among the three ternaries for their respective growing thickness with time is also done. A good agreement is found between the present findings and the experimental values.