Abstract:
A one dimensional numerical method has been employed to construct the concentration
profiles in front of growing crystal interface under the normal conditions and the growth rate,
thickness, and dimensionless concentration profiles of Gallium Phosphide (GaP) and Gallium
Antimonide (GaSb) in Ga-rich solution are computed by Liquid Phase Epitaxy (LPE), The
LPE technique is particularly useful for the growth of ill-V compound semiconductors, such
as GaP and GaSh, where the metals, e.g. Gallium (Ga) in the group III elements serves as a
solvent element and can make the solutions at equilibrium temperal11TC. One-dimensional
solute diffusion model equation has been solved numerically by the Laplacian centered
difference approximation. Then the concentration profiles of soiute atoms (i.c" Phosphorus
and Antimony) in the melt, in front of a growing crystal interface during the liquid phase
epitaxial growth at different cooling rates have been simulated by the help of the computer
simulation technique. The data obtained from the simulation study has been used to calculate
the growth rate, the thickness of the grown layer and the dimensionless concentmtion
parameter of GaSb and GaP for dIfferent growth parameters, such as time and temperature.
Our model has been applied to calculate the average thickness of the grown solid as a
function of lime and these theoretical findings have been compared \vith the reported
experimental values. A good agreement has been found between our findings with the
reported experimental val\les.
