Modeling of liquid phase epitaxial growth of GaSb GaP crystals

Abstract

A one dimensional numerical method has been employed to construct the concentration profiles in front of growing crystal interface under the normal conditions and the growth rate, thickness, and dimensionless concentration profiles of Gallium Phosphide (GaP) and Gallium Antimonide (GaSb) in Ga-rich solution are computed by Liquid Phase Epitaxy (LPE), The LPE technique is particularly useful for the growth of ill-V compound semiconductors, such as GaP and GaSh, where the metals, e.g. Gallium (Ga) in the group III elements serves as a solvent element and can make the solutions at equilibrium temperal11TC. One-dimensional solute diffusion model equation has been solved numerically by the Laplacian centered difference approximation. Then the concentration profiles of soiute atoms (i.c" Phosphorus and Antimony) in the melt, in front of a growing crystal interface during the liquid phase epitaxial growth at different cooling rates have been simulated by the help of the computer simulation technique. The data obtained from the simulation study has been used to calculate the growth rate, the thickness of the grown layer and the dimensionless concentmtion parameter of GaSb and GaP for dIfferent growth parameters, such as time and temperature. Our model has been applied to calculate the average thickness of the grown solid as a function of lime and these theoretical findings have been compared \vith the reported experimental values. A good agreement has been found between our findings with the reported experimental val\les.