Abstract:
In the present research work thc doped BaTiO) were prepaTed by conventional mixed
oxide method. The doping elements were Caleium, Strontium, Chromium and
Vanadium. The doping level., were 0.1 and 0.025 mole fraction. The samples were
sintered at 1300°C. Effect ot doping, concentration and milling procedure on the
dlelectric properties of BaTiOJ based ceramics were studied. The dielectric constant and
dielectric lo,s were measured in the frequency range of 0.5 kHz to 13 MHz at room
temperature. The highest value of the dielectric constant for sample Ba(Ti'915Cr.Il~5l0J
wa, found 2729 a~d the lowc,t value for the sampleBa.9Sr.1 (Ti.mY.o,.I) was found
14.57. The value of dielectric constant wa, found higher at low frequency and almost thc
samc at 100 KHz, the dielectric con,tant is lower at high frequencies.PureBaTiOJ
exhibit, the curie temperature at 65"C.Thesample Ba(TimsCr.015)OJ, Ba,9Sr.1 (Ti915
Cr'n,)O." BU.gCa.lSr.l(TimsCrmslO, and Ba,sCa.lSr I(Ti.mY.fi2j)O.1 exhibits the curie
temperature 80°C at fixed frequency 1 MHz. The sample (Tiom,vO.U15)OJexhibits the
maximum curie temperature 1I0aC at fixed frequencylMlh. The sample BU,9Sr,[
(Ti,mY.025)O, exhibits the dielectric constant 90"C. The maximum dielcctric lo,s was
2.74 for the sample Ba.sCa.[SLI(Ti.mCr.02j)O, the minimum dielectric los, was 0.034
ror thc sample BU.9Sr.,(Ti.,"-\C'o,5)O.l at 13 MH~. Dielectric measurement also indicates
that curie temperature for doped ,ample is larger than the pure undoped EaTIO, sample.
From the pre,ent investigation it i, observed that the substitution of dopant having larger
ionic radius increases the dielectric constant. Dielectric constant has dependence on the
grain ,ize thereby ball milling time. It i<,ob,erved that dielectric con,tant is higher for 24
hours ball milling sample,.
