Base transit time for all levels of injection of a bipolar junction transistor with gaussian base doping profile

dc.contributor.advisor	Shahidul Hassan, Dr. M. M.
dc.contributor.author	Touhidur Rahman
dc.date.accessioned	2016-06-21T06:22:12Z
dc.date.available	2016-06-21T06:22:12Z
dc.date.issued	2004-01-22
dc.identifier.uri	http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3318
dc.description.abstract	For abstracts please see full text	en_US
dc.language.iso	en	en_US
dc.subject	Biploar junction transistor	en_US
dc.subject	Gaussian base	en_US
dc.subject	Transistor - Low injection - High injection - Electric	en_US
dc.title	Base transit time for all levels of injection of a bipolar junction transistor with gaussian base doping profile	en_US
dc.type	Thesis-MSc	en_US
dc.contributor.id	040206203 P	en_US
dc.identifier.accessionNumber	99099
dc.contributor.callno	623.81528/TOU/2004	en_US