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Base transit time of a nonuniformly doped base heterojunction bipolar transistor ( HBT)
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| dc.contributor.advisor | Khan, Dr. Md. Ziaur Rahman | |
| dc.contributor.author | Yeasir Arafat | |
| dc.date.accessioned | 2016-06-21T09:22:41Z | |
| dc.date.available | 2016-06-21T09:22:41Z | |
| dc.date.issued | 2009-10-27 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3324 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Transistor | en_US |
| dc.title | Base transit time of a nonuniformly doped base heterojunction bipolar transistor ( HBT) | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 100006204 P | en_US |
| dc.identifier.accessionNumber | 107378 | |
| dc.contributor.callno | 623.81528/YEA/2009 | en_US |
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)