DSpace Repository
Quantum mechanical modeling of post soft breakdown conduction thorugh ultrathin gate oxide MOS devices
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.advisor | Khosru, Dr. Quazi Deen Mohd. | |
| dc.contributor.author | Qazi, Muhammad | |
| dc.date.accessioned | 2016-06-22T05:23:18Z | |
| dc.date.available | 2016-06-22T05:23:18Z | |
| dc.date.issued | 2006-07-30 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3345 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Metal oxide semiconductors | en_US |
| dc.title | Quantum mechanical modeling of post soft breakdown conduction thorugh ultrathin gate oxide MOS devices | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 040406215 P | en_US |
| dc.identifier.accessionNumber | 102888 | |
| dc.contributor.callno | 623.815284/QAZ/2006 | en_US |
Files in this item
This item appears in the following Collection(s)
-
Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)