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Capacitance - voltage characteristics of partially depleted four gate transistor under different gate bias conditions
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Capacitance - voltage characteristics of partially depleted four gate transistor under different gate bias conditions
Somaia Sarwat Sylvia
URI:
http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3390
Date:
2009-08-19
Abstract:
For abstracts please see full text
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)
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