Modeling of graphene nanoribbon field effect transistor utilizing simultaneous asjustment of chirality and width

Abstract

Graphene Nanoribbon (GNR) circuit using chirality and width is currently an interesting branch of nanotechnology to deal with. Different tortuous shapes of GNRs generate different bandstructures. Using this property different GNR transistors were analyzed and used to make basic logic gates. The research encompasses the solution of bandstructure and density of states of Graphene. Both Carbon Nanotube (CNT) and Graphene nanoribbon (GNR) had been analyzed to observe their properties depending on their size and shape. The validity of the developed model was checked by comparing the results with the reported data available in the literature. GNRFETs were constructed using both the chirality and width adjustment for tuning the bandstructure. It was found that the simultaneous adjustment of chirality and width can be used to make logic circuits with better efficiency. The bandstructure, density of states, I-V characteristics of GNR circuits were obtained. The proposed GNR circuits perform ballistic transport and it is junctionless which reduces the energy consumption. The device is one dimensional which makes it possible for the circuit to reduce the size. The proposed structure can be a useful for future nanoscale logic devices.