dc.description.abstract |
A capacitively coupled parallel plate glow discharge reactor has been used to deposit
plasma polymerized pyrrole (PPPy), plasma polymerized N,N,3,5 tetramethylaniline
(PPTMA) and plasma polymerized pyrrole-N,N,3,5 tetramethylaniline (PPPy-PPTMA) bilayer
composite thin films on to glass substrates at room temperature. To deposit single-layer
PPPy and PPTMA thin films, the deposition parameters such as flow-rate, power, vacuum
order, etc. were kept almost same for all samples, but deposition time was varied to grow
thin films with different thicknesses, so that the comparison of the results could be made for
various plasma polymerized thin films. On the other hand, to deposit the bilayer composite
films, pyrrole-monomer has been used as the parent-material and N,N,3,5 tetramethylaniline
monomer has been deposited in different deposition time ratios after the pyrrole films were
formed. The structural analyses by Fourier transform infrared (FTIR) spectroscopy have
indicated that the monomer has undergone re-organization and the ring structure is retained
during the plasma polymerization of PPPy and PPTMA thin films, and the bilayer composite
thin films contain the characteristics of both of its components. From DTA and TGA traces it
is observed that the weight loss in PPPy-PPTMA bilayer composite thin films is much higher
than those of its component thin films even at relatively lower temperature. This behavior
suggests PPPy-PPTMA bilayer composite thin films are less thermally stable and less
breakdown thermal energy is needed for bilayer structure to dissociate the bonds than those
of its components. From the UV-Visible absorption spectra, it is observed that both the
allowed direct transition (Eqd) and allowed indirect transition (Eqi) energy gaps are decreased
with the decrease of the thickness for all types of thin films, which is an indication of
decreasing the resistivity and increasing the conductivity of the thin film of lower thicknesses.
Moreover, it is also observed that the energy gaps of the PPPy-PPTMA bilayer composite
thin films are higher compared to those of the PPPy and PPTMA thin films which indicates a
higher electrical resistivity of the bilayer thin films than those of its component films. The
change in the resistivity suggests a probable change in physical properties during the
formation of the plasma polymerized thin films and the result is interpreted in terms of
oxidation, inhomogeneties and irregularities in the complex polymer-polymer interface of the
bilayer composite structure. In the study of the direct current conduction mechanism in
PPPy-PPTMA bilayer composite thin films of different composition and different thicknesses
the current density – voltage (J-V) characteristics indicate an increase in conductivity of bilayer thin films as the proportion of PPTMA is increased in the films. It is also observed that
the conductivity of the bilayer composite thin film is reduced compared to its component thin
films. This result is consistent with the previous result that the higher values of the optical
band gaps were observed for bilayer composite thin films as compared to its component thin
films. It is seen that in the low voltage region, the current conduction obeys Ohm’s law while
the charge transport phenomenon appears to be the space charge limited in the higher
voltage regions. The free charge carrier density, the mobility and the trap density has been
calculated from the J-V characteristics and it is found that the SCLC is trap-mediated. From
the study of ac electrical properties the variation of the dielectric constant ε ' and dielectric
loss factor ε "with the frequency shows electrical relaxation properties which is related with
multi-component contribution of polarizability of the polar materials; e.g. interfacial or space
charge polarization, orientational polarization of molecular chain, α-relaxation process, etc.
The ac conductivity, σac , is observed to be increased with the frequency which is attributed
to the relaxations caused by the motion of electrons or atoms, which could involve hopping
between equilibrium sites; and it is therefore concluded that, the ac conduction mechanism
is due to the hopping of carriers. |
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