Improved model for I-V characteristics of Ballasitc MOSFETs

dc.contributor.advisor	Anisul Haque, Dr.
dc.contributor.author	Yunus, Mohammad
dc.date.accessioned	2016-08-03T03:55:15Z
dc.date.available	2016-08-03T03:55:15Z
dc.date.issued	2002-04
dc.identifier.uri	http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3582
dc.description.abstract	For abstracts please see full text	en_US
dc.language.iso	en	en_US
dc.publisher	Department of Electrical and Electronic Engineering, BUET	en_US
dc.subject	Improved - Model - I-V Characteristic - Ballasitc - MOSFET	en_US
dc.title	Improved model for I-V characteristics of Ballasitc MOSFETs	en_US
dc.type	Thesis-MSc	en_US
dc.contributor.id	040006224 P	en_US
dc.identifier.accessionNumber	96718
dc.contributor.callno	623.81528/YUN/2002	en_US