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Self sychronized ultra wide band receiver front-end design using 90nm CMOS technology for on-chip RF wireless interconnects

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dc.contributor.advisor Harun-ur Rashid, Dr. A.B.M.
dc.contributor.author Roy, Apratim
dc.date.accessioned 2016-08-03T10:03:17Z
dc.date.available 2016-08-03T10:03:17Z
dc.date.issued 2011-03
dc.identifier.uri http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3593
dc.description.abstract A self synchronized TR-UWB receiver front-end is designed in this dissertation using model parameters of IBM® 90nm CMOS technology on industry standard Cadence and Hspice platforms. Novel circuit topologies are proposed which realize the practical on-chip implementation of a TR-UWB transceiver. At first, a wideband delay element (WBDE) is designed with multi staging capacity and monotonic delays which is able to handle very narrow UWB pulses. It is built in an integrated fashion with low power requirements desirable for onchip wireless interconnects. A wide range of delays of monotonic nature (100-1000ps) is achieved by varying the dimensions of the transistors, the power supply voltage, the shunt capacitances and the number of stages in the delay chain. The WBDE also provides the added benefit of making the receiver self-synchronizing as the mixer after it no longer needs a separate template signal. A cascode 21GHz low noise amplifier (LNA) which boosts the weak signal without degrading the overall noise figure is included in the design. The forward gain (S21) of the LNA is 9.72dB at 21GHz with 4GHz bandwidth (19GHz - 23GHz). Reverse isolation is always less than -26.4dB. Input and output matching parameters are -26dB (S11) and -19.5dB (S22) respectively near the center frequency. Noise figure is 4.4 dB at the center frequency and the circuit is unconditionally stable. The amplifier consumes 20.76mW of power (including the bias circuitry) when driven by a 1.2 V power supply. A direct conversion mixer which uses three differential MOS pairs is analyzed for the ultra-wideband systems. To improve its gain, noise performance and linearity new techniques like bleeding transistors and resonant inductors are tried out to compensate for parasitic capacitances. RF and IF frequencies of the RF mixer are 5.1 GHz and 100 MHz respectively, and the radio frequency can be adjusted within the range of 2- 20GHz. A voltage conversion gain of 16.1 dB and a DSB Noise Figure of 8.253 dB have been achieved with very low power consumption. A high degree of LO to RF isolation (in the range of -94dB), RF to IF isolation (in the range of -95dB), LO to IF isolation (in the range of -143dB) and RF to LO isolation (in the range of -6.4kdB) is expected for this design. This mixer achieves an input-referred IP3 (third order inter modulation product) point of −1.93 dBm and an input referred 1 dB compression point of -10.67dBm. Along with transient and HB (Harmonic Balance) analysis, PSS (Periodic Steady State), Swept PAC (Periodic Alternating Signal), Swept PXF, QPSS (Quasi-periodic Steady State), QPAC, PSP (Periodic S-Parameter), Pnoise (Periodic Noise), and QPnoise (Quasi-periodic Noise) analyses are performed for the mixer to ensure optimized performance. A fully symmetric operational trans-conductance amplifier (OTA) based analog window comparator is used as a novel threshold detector for UWB systems which provides the output stream at a bit rate 0.1 to 1Gbps. During the schematic design phase, extensive iterations are carried out to optimize transistor sizes. The findings are compared with results from other standard UWB techniques and the accuracy of the results is also evaluated so that the design is ready to be added to the industrial process flow. The TR-UWB receiver system satisfies the gain-noise-linearity requirements of a microwave receiver and will facilitate the realization of the TR-UWB communication scheme. en_US
dc.language.iso en en_US
dc.publisher Department of Electrical and Electronic Engineering (EEE) en_US
dc.subject Wireless communication systems-Wideband en_US
dc.title Self sychronized ultra wide band receiver front-end design using 90nm CMOS technology for on-chip RF wireless interconnects en_US
dc.type Thesis-MSc en_US
dc.contributor.id 0409062237 en_US
dc.identifier.accessionNumber 109114
dc.contributor.callno 623.82/ROY/2011 en_US


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