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Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric
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| dc.contributor.advisor | Haque, Dr. Anisul | |
| dc.contributor.author | Mojammel Al Hakim, Mohammad | |
| dc.date.accessioned | 2016-08-07T03:44:11Z | |
| dc.date.available | 2016-08-07T03:44:11Z | |
| dc.date.issued | 2002-03-03 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3606 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Modeling - Direct tunneling - Gate current - Capacitance - Deep submicron - MOSFETs - High-K dielectric | en_US |
| dc.title | Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 040006216 P | en_US |
| dc.identifier.accessionNumber | 96712 | |
| dc.contributor.callno | 623.815363/MOJ/2002 | en_US |
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)